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Mosfet FQP13N10 pour Lincoln2,SS9900....
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Type: FQP13N10

Transistor à effet de champ: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 65

Tension drain-source de rupture (Vds): 100

Tension grille-source de rupture (Vgs): 25

Courant de drain maximum supportable (Id): 12.8

Température maximale de jonction en fonctionnement (Tj), °C: 175

Résistance drain-source RDS (activé), Ohm: 0.18

Boitier: TO220

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